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NIM nanosystems initiative munich

Dienstag, 23. Mai 2017

Towards telecom-band nanowire lasers on Si

Dr. Zhang Guoqiang, NTT Basic Research Laboratories, Japan

Sprecher: Öffnet externen Link in neuem FensterDr. Zhang Guoqiang, NTT Basic Research Laboratories, Atsugi, Japan

Beginn: Dienstag, 23. Mai 2017, 13:00 Uhr

Veranstaltungsort: Seminarraum S 101, Walter-Schottky-Institut (WSI), Am Coulombwall 4, 85748 Garching

Abstract (Leitet Herunterladen der Datei einDownload):

Monolithic integration of III-V compound semiconductor lasers in the telecom band on Si still remains challenging. Nanowire structure provides an alternative solution because of its high ability of lattice relaxation. We have developed gold-free CMOS-compatible growth process for InP/InAs quantum nanostructure nanowires with high controllability (structure and doping) and superior optical property. The nanowire exhibits lasing behavior in the telecom band at room temperature.


Montag, 12. März 2018

Two-dimensional coherent spectroscopy of a semiconductor microcavity

Prof. Dr. Alan D. Bistrow, Department of Physics & Astronomy, West Virginia University Morgantown, USA


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