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NIM nanosystems initiative munich

Tuesday, 23 May, 2017

Towards telecom-band nanowire lasers on Si

Dr. Zhang Guoqiang, NTT Basic Research Laboratories, Japan

Speaker: Opens external link in new windowDr. Zhang Guoqiang, NTT Basic Research Laboratories, Atsugi, Japan

Time: Tuesday, 23 May 2017, 13:00 h

Venue: Seminar room S 101, Walter-Schottky-Institute (WSI), Am Coulombwall 4, 85748 Garching

Abstract (Initiates file downloadDownload):

Monolithic integration of III-V compound semiconductor lasers in the telecom band on Si still remains challenging. Nanowire structure provides an alternative solution because of its high ability of lattice relaxation. We have developed gold-free CMOS-compatible growth process for InP/InAs quantum nanostructure nanowires with high controllability (structure and doping) and superior optical property. The nanowire exhibits lasing behavior in the telecom band at room temperature.


Monday, 04 June, 2018

Solution synthesis of metal oxide nanoparticles for interfacial contact…

Prof Dr Julia W P Hsu, Materials Science and Engineering Erik Jonsson School of Engineering and Computer Science, University of Texas at Dallas (UT Dallas), USA


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